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2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data
INA-51063
Features
* Ultra-Miniature Package * Internally Biased, Single 5 V Supply (12 mA) * 20.5 dB Gain * 3 dB NF * Unconditionally Stable
Surface Mount SOT-363 (SC-70) Package
Description
Hewlett-Packard's INA-51063 is a Silicon monolithic amplifier that offers excellent gain and noise figure for applications to 2.4 GHz. Packaged in an ultra-miniature SOT-363 package, it requires half the board space of a SOT-143 package. The INA-51063 uses a topology which is internally biased, eliminating the need for external components and providing decreased sensitivity to ground inductance. The INA-51063 is fabricated using HP's 30 GHz fMAX ISOSATTM Silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.
Applications
* Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner Applications
Pin Connections and Package Marking
GND 1 6 OUTPUT
51
VCC RF OUTPUT
GND 2 INPUT 3
5 GND 4 VCC
Note: Package marking provides orientation and identification.
Equivalent Circuit (Simplified)
RF INPUT
GROUND
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5965-9680E
Absolute Maximum Ratings
Symbol VCC Pin Tj TSTG Parameter Supply Voltage, to ground CW RF Input Power Junction Temperature Storage Temperature Units V dBm C C Absolute Maximum[1] 12 +13 150 -65 to 150 Thermal Resistance[2]: jc = 200C/W
Notes: 1. Operation of this device above any one of these limits may cause permanent damage. 2. TC = 25C (TC is defined to be the temperature at the package pins where contact is made to the circuit board)
INA-51063 Electrical Specifications[3], TC = 25C, ZO = 50 ,VCC = 5 V
Symbol Gp NF P1dB IP3 VSWR Icc Parameters and Test Conditions Power Gain (|S21|2) f = 1500 MHz Noise Figure f = 1500 MHz Output Power at 1 dB Gain Compression f = 1500 MHz Third Order Intercept Point f = 1500 MHz Input VSWR f = 1500 MHz Output VSWR f = 1500 MHz Device Current Group Delay f = 1500 MHz Units dB dB dBm dBm Min. 18 Typ. 20.5 3 -2.5 + 6 1.3 1.8 12 240 Max.
d
mA ps
14
INA-51063 Typical Scattering Parameters[3], TC = 25C, ZO = 50 ,VCC = 5.0 V
Freq. GHz 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 3.00 3.50 4.00 S11 Mag 0.17 0.17 0.16 0.16 0.14 0.13 0.12 0.10 0.08 0.07 0.07 0.07 0.08 0.10 0.12 0.14 0.17 0.19 0.22 0.24 0.26 0.28 0.30 0.32 0.33 0.35 0.41 0.45 0.50 Ang 177 175 170 166 162 159 158 158 164 172 -174 -156 -142 -135 -131 -131 -132 -134 -135 -139 -142 -145 -148 -151 -154 -157 -169 -179 172 dB 20.8 20.8 20.8 20.7 20.8 20.8 20.8 20.9 20.9 20.9 20.9 20.9 20.9 20.9 20.8 20.7 20.6 20.4 20.1 19.8 19.4 19.0 18.5 18.0 17.4 16.9 13.8 10.8 8.3 S21 Mag 10.94 10.95 10.94 10.89 10.94 10.96 11.00 11.06 11.06 11.10 11.10 11.14 11.11 11.08 11.01 10.88 10.71 10.45 10.16 9.78 9.37 8.90 8.42 7.96 7.45 6.98 4.89 3.48 2.59 Ang -4 -7 -14 -21 -28 -35 -42 -49 -57 -64 -72 -80 -88 -96 -105 -113 -122 -131 -139 -148 -157 -165 -174 179 171 164 133 108 88 dB -30.9 -30.8 -30.9 -31.0 -31.2 -31.3 -31.5 -31.6 -31.9 -32.1 -32.5 -32.7 -33.2 -33.5 -33.9 -34.6 -35.2 -36.0 -36.8 -37.8 -39.1 -40.6 -42.2 -44.3 -46.7 -48.9 -39.0 -31.9 -26.9 S12 Mag 0.029 0.029 0.028 0.028 0.028 0.027 0.027 0.026 0.026 0.025 0.024 0.023 0.022 0.021 0.020 0.019 0.017 0.016 0.014 0.013 0.011 0.009 0.008 0.006 0.005 0.004 0.011 0.025 0.045 Ang -1 -2 -4 -5 -7 -9 -10 -12 -14 -15 -17 -18 -21 -23 -25 -28 -30 -33 -36 -39 -42 -47 -53 -63 -79 -108 163 146 132 Mag 0.23 0.23 0.23 0.23 0.24 0.24 0.24 0.24 0.25 0.26 0.26 0.27 0.27 0.28 0.28 0.28 0.28 0.28 0.27 0.27 0.25 0.24 0.22 0.21 0.20 0.18 0.10 0.03 0.05 S22 Ang -5 -8 -16 -25 -33 -43 -52 -61 -69 -77 -85 -94 -103 -113 -122 -131 -140 -150 -159 -168 -177 175 166 158 150 143 115 123 -132 K Factor 1.65 1.65 1.70 1.70 1.69 1.74 1.74 1.79 1.78 1.83 1.89 1.95 2.02 2.10 2.19 2.31 2.57 2.77 3.20 3.53 4.32 5.49 6.49 9.03 11.51 15.20 7.64 4.61 3.29
Note: 3. Reference plane per Figure 9 in Applications Information section.
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INA-51063 Typical Performance, TC = 25C, ZO = 50 , VCC = 5 V
24 5.5 V 22 20
GAIN (dB) 5.0 4.5
4 5.5 V 2 5.0 V
5.0 V
5.0 V 4.5 V
NOISE FIGURE (dB)
4.0 3.5 3.0 2.5 2.0 1.5 4.5 V 5.5 V
0
P 1 dB (dBm)
2.5
18 16 14 12 10 0.05 0.45 0.85
-2 4.5 V -4 -6 -8
1.25
1.65
2.05
2.45
1.0 0.1
0.5
0.9
1.3
1.7
2.1
-10 0.1
0.9
1.5
2.1
2.7
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Gain vs. Frequency and Voltage.
Figure 2. Noise Figure vs. Frequency and Voltage.
Figure 3. Output Power for 1 dB Gain Compression vs. Frequency and Voltage.
6 -40 C 4 2
P 1 dB (dBm)
24 22 20 +25 C -40 C +85 C
5.0 4.5
NOISE FIGURE (dB)
4.0 3.5 +85 C 3.0 2.5 2.0 1.5 -40 C +25 C
GAIN (dB)
0 +25 C -2 -4 -6 -8 -10 0.1 0.6 1.2 +85 C 1.8 2.4
18 16 14 12 10 0.1
0.6
1.2
1.8
2.4
3.0
1.0 0.1 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Gain vs. Frequency and Temperature.
Figure 5. Noise Figure vs. Frequency and Temperature.
Figure 6. Output Power for 1 dB Gain Compression vs. Frequency and Temperature.
2.2 2.0 1.8 1.6 1.4 VSWR IN 1.2 1.0 0.05 0.45 VSWR OUT
ICC (mA)
25
20 +85 C 15 +25 C 10 -40 C 5 0
VSWR (n:1)
0.85
1.25
1.65
2.05
2.45
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
VCC (V)
Figure 7. Input and Output VSWR vs. Frequency.
Figure 8. Supply Current vs. Voltage and Temperature.
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INA-51063 Applications Information
Introduction The INA-51063 is a silicon RFIC amplifier with a 50 input and output. The INA-51063 is easy to use for low noise and multipurpose gain block applications up to 2.4 GHz. Phase Reference Planes The positions of the reference planes used to measure S-Parameters are shown in Figure 9. As seen in the illustration, the reference planes are located at the point where the package leads contact the test circuit. Biasing The INA-51063 is a voltage biased device and operates from a single +5 volt power supply with a typical current drain of only 12 mA. All bias regulation circuitry is integrated into the RFIC. The supply voltage for the INA-51063 is fed in through the separate VCC pin of the device and does not require RF isolation from the input or output. No additional external DC components are needed.
Operating Details The INA-51063 is very easy to use. The basic application of the INA51063 is shown in Figure 10. DC blocking capacitors are placed in series with the RF Input and RF Output to isolate adjacent stages from the internal bias voltages that are present at these terminals. The values of the blocking capacitors are determined by the lowest operating frequency. The values for the blocking capacitors are chosen such that their reactances are small relative to 50 . As an example, use of the INA-51063 for a 2.4 GHz application would require blocking capacitors of at least 33 pF. The VCC connection to the amplifier must be RF bypassed by placing a capacitor to ground directly at the bias pin of the package. Like the DC blocking capacitors, the value of the VCC bypass capacitor is determined by the lowest operating frequency for the amplifier. This value may typically be the same as that of the DC blocking capacitors. If long bias lines are used to connect the amplifier to the VCC supply, additional bypass capacitors may be needed to prevent resonances that would otherwise
result in undesirable gain responses. A well-bypassed VCC line is also desirable to prevent possible oscillations that may occur due to feedback through the bias line from other stages in a cascade. SOT-363 PCB Layout The INA-51063 is packaged in the miniature SOT-363 (SC-70) surface mount package. A PCB pad layout for the SOT-363 package is shown in Figure 11 (dimensions are in inches). This layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the high frequency RF performance of the INA-51063. The layout is shown
0.026
0.07
0.035
0.016
Figure 11. PCB Pad Layout (Dimensions in Inches).
REFERENCE PLANES
TEST CIRCUIT
Cblock RF OUTPUT
51
Figure 9. Reference Planes.
RF INPUT Cblock
VCC Cbypass
Figure 10. Basic Amplifier Application.
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with a nominal SOT-363 package footprint superimposed on the PCB pads. RF Layout The RF layout in Figure 12 is suggested as a starting point for designs using the INA-51063 amplifier. Adequate grounding is needed to obtain maximum performance and to reduce the possibility of potential instability. All three ground pins of the RFIC should be connected to RF
C RF OUTPUT 50 VCC
ground by using plated through holes (vias) near the package terminals. The power supply connection to the amplifier must be RF bypassed by placing a capacitor directly to ground at the VCC pin of the package. It is recommended that the PCB traces for the ground pins NOT be connected together underneath the body of the package. PCB pads hidden under the package cannot be adequately inspected for SMT solder quality.
FR-4 or G-10 PCB material is a good choice for most low cost wireless applications. Typical board thickness is 0.025 or 0.031 inches. The width of 50 microstriplines in these PCB thicknesses is also convenient for mounting chip components such as the series inductor at the input for impedance matching or for DC blocking capacitors. For noise figure sensitive applications, the use of PTFE/glass dielectric materials may be warranted to minimize transmission line losses at the amplifier input.
51
50 RF INPUT
Figure 12. RF Layout.
INA-51063 Part Number Ordering Information
Part Number INA-51063-TR1 INA-51063-BLK Devices per Container 3,000 100 Container 7" reel Antistatic bag
Package Dimensions
Outline 63 (SOT-363/SC-70)
1.30 (0.051) REF.
2.20 (0.087) 2.00 (0.079)
1.35 (0.053) 1.15 (0.045)
0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 0.425 (0.017) TYP.
0.30 REF.
1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006)
10
0.30 (0.012) 0.10 (0.004)
0.20 (0.008) 0.10 (0.004)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
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